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采用APSYS软件研究了InGaN/GaN量子阱垒层掺杂变化对双波长发光二极管发光光谱的调控问题.在不同掺杂类型和浓度下对器件电子空穴浓度分布、载流子复合速率、能带结构、发光光谱进行分析,结果表明,调节最了阱垒层n型和p型的掺杂浓度可以精确而有效地根据需要调控发光光谱,解决发光光谱调控难的问题.这些现象归因于掺杂的量子阱垒层对电子空穴分布的调控作用.
APSYS software was used to study the regulation of the doping of InGaN / GaN quantum well layers on the emission spectra of dual-wavelength LEDs. The effects of different doping types and concentrations on electron-hole concentration distribution, carrier recombination rate, The results show that adjusting the n-type and p-type doping concentrations of the most well layers can precisely and effectively control the luminescence spectrum according to the requirement and solve the problem of difficult regulation of the luminescence spectrum. These phenomena are attributed to doping Regulatory Effect of Miscellaneous Quantum Wellbores on Electron Hole Distribution.