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一、引言 等离子氮化硅膜已成功地用于双极和LSI MOS器件的钝化。 在半导体器件制造过程中,必须控制表面沾污。通常是采用钝化膜防止杂质渗入。钝化膜又分为,一次钝化和二次钝化。一次钝化的目的是控制和稳定半导体器件表面的电性能。硅器件的一次钝化膜通常是SiO_2,例如,加HCl热生长SiO_2成功地控制了钠离子。二次钝化层在氧化层金属化的互连及端点上提供化学、机械保护,阻挡可动离子和水蒸汽渗入;防止后工序划伤铝布线。因而可以提高可靠性和成品率。二次钝化也叫最后钝化膜,它必须满足以下要求: (1) 材料本身必须是一种优良的介质膜。热和化学稳定性好、针孔少、绝缘性能好、硬度大,对器件能提供化学和机械上的保护。
I. INTRODUCTION Plasma silicon nitride films have been successfully used for passivation of bipolar and LSI MOS devices. Surface contamination must be controlled during the manufacture of semiconductor devices. Passivation film is usually used to prevent the infiltration of impurities. Passivation film is divided into a passivation and secondary passivation. The purpose of passivation is to control and stabilize the electrical properties of the surface of the semiconductor device. One passivation film of a silicon device is usually SiO 2, for example, adding HCl to heat to grow SiO 2 successfully controls sodium ions. The secondary passivation layer provides chemical and mechanical protection at the oxide metallization interconnects and terminations, blocking the penetration of mobile ions and water vapor and preventing post-process scratches on the aluminum wiring. As a result, reliability and yield can be improved. Secondary passivation, also known as the last passivation film, must meet the following requirements: (1) The material itself must be an excellent dielectric film. Thermal and chemical stability, pinhole less, good insulation properties, hardness, the device can provide chemical and mechanical protection.