论文部分内容阅读
用高温石墨作为红外辐射源,对高浓度的注砷硅进行了瞬态(13 秒)辐照,达到非常好的退火效果.对于10~(16)cm~(-2)剂量的注砷硅可达到100％的电激活,且损伤恢复比热退火(1100℃,30分)情况要好,引起的注入原子的再分布比常规的高温热退火要小得多.用本方法退火的注砷硅PN结具有良好的电特性。因此,在 VLSI工艺中它是一种很有应用前景的离子注入退火技术.
Using high temperature graphite as the infrared radiation source, the high concentration of arsenic-containing silicon was irradiated by a transient (13 seconds) to achieve a very good annealing effect.For the 10 ~ (16) cm ~ (-2) Up to 100% electrical activation, and the damage recovery is better than thermal annealing (1100 ℃, 30 minutes), resulting in the redistribution of implanted atoms is much smaller than the conventional high-temperature thermal annealing. PN junction has good electrical properties. Therefore, it is a very promising ion implantation annealing technique in the VLSI process.