据报道,在半导体中制作几十毫微米细线和箱阱,若把电子放到里面,可产生电子的量子效应,并能制作高性能的光电子器件.为此各国都在进行研究,日本NTT电气通信研究所用有机金属晶体生长法,在与特定晶面倾斜几度的GaAs衬底上,替附着厚度为原子层的 It is reported that in the semiconductor fabrication tens of nanometers thin wire and box well, if the electron into the inside, can produce electronic quantum effects, and can produce high-performance optoelectronic devices.Therefore, various countries are studying, Japan NTT Institute of Electrical Communications using organic metal crystal growth method, with the specific crystal plane tilted a few degrees GaAs substrate, attached to the thickness of the atomic layer