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采用分子束外延(MBE)技术在蓝宝石衬底上依次生长n+GaN下电极层、i型AlxGa1-xN势垒层和n+GaN发射极层,并通过半导体微细加工技术,制作了AlGaN/GaN异质结单片集成紫外/红外双色探测器。该器件利用不同的探测机理,同时实现了红外光和紫外光探测,拓展了响应光谱的范围。红外光探测是通过AlGaN/GaN异质结界面自由电子吸收和功函数内部光致发射效应完成的,紫外光探测是通过AlxGa1-xN势垒层带间吸收完成的。对单元器件的暗电流特性、紫外及红外光谱特性进行了测试。测试结果表明,紫外响应截止波长356 nm,响应度180 mA/W,红外响应峰值波长14.5μm,响应度49 mA/W。
The n + GaN lower electrode layer, the i-type AlxGa1-xN barrier layer and the n + GaN emitter layer were sequentially grown on a sapphire substrate by using molecular beam epitaxy (MBE) technology. AlGaN / GaN Heterojunction monolithic integrated UV / IR two-color detector. The device uses a different detection mechanism, while achieving the infrared and ultraviolet light detection, expanding the scope of the response spectrum. Infrared light detection is achieved through the free electron absorption at the AlGaN / GaN heterojunction interface and the internal photoluminescence effect in the work function. The UV detection is accomplished by absorption between AlxGa1-xN barrier layers. The dark current characteristics of the device, UV and infrared spectral characteristics were tested. The test results show that UV response cutoff wavelength of 356 nm, responsivity of 180 mA / W, infrared peak response wavelength of 14.5 μm, the response of 49 mA / W.