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本文发展了一种SiO2上多晶GeSi再结晶的方法，研究了其再结晶性质．由RRH／VLP－CVD系统在SiO2上生长的性能优良的多晶GeSi材料，经能量为180keV，剂量为2×1014cm-2的Si+离子注入非晶化处理后，形成具有一定损伤分布的非晶层．由此，我们系统研究了多晶GeSi非晶化后的再结晶性质，认为Ge在再结晶过程中可能起了的诱导晶化作用；首次观察到GeSi晶粒的纵向生长行为；得到的GeSi晶粒大于同样条件下得到的多晶Si晶粒．本项研究为多晶GeSi在高速TFT器件及其它高速器件中的应用奠定了基础，并为制备GeSi量子线结构提供了一条可能的途径．
In this paper, a method of polycrystalline GeSi recrystallization on SiO2 was developed and its recrystallization properties were studied. The polycrystalline GeSi material grown on SiO2 by the RRH / VLP-CVD system is amorphous with Si + ion implantation at a dose of 180 keV and a dose of 2 × 10 14 cm -2, forming an amorphous Floor. Therefore, we systematically studied the recrystallization properties of polycrystalline GeSi after amorphization. It is considered that Ge may induce crystallization during recrystallization. For the first time, the longitudinal growth behavior of GeSi grains is observed. The obtained GeSi crystals The grain is larger than the polycrystalline Si grains obtained under the same conditions. This study lays the foundation for the application of polycrystalline GeSi in high-speed TFT devices and other high-speed devices, and provides a possible way for preparing the GeSi quantum wire structure.