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研究了沉积温度对化学气相渗透ＳｉＣ基体微观结构及其碳纤维增强复合材料性能的影响。９５０℃沉积碳化硅为非晶态；１０００℃以上沉积出的碳化硅为结晶态，１０５０℃沉积碳化硅晶体以（１１１）取向为主；１２５０℃沉积碳化硅晶体以（２２０）取向为主。沉积温度升高，沉积深度和均匀性降低。制备毡基Ｃ／ＳｉＣ复合材料的沉积温度为１１００～１１５０℃；制备三维编织Ｃ／ＳｉＣ复合材料的沉积温度约为１０００～１０５０℃。
The effects of deposition temperature on the microstructure of SiC matrix by chemical vapor infiltration and the properties of carbon fiber reinforced composites were investigated. The silicon carbide deposited at 950 ℃ is amorphous, the silicon carbide deposited at 1000 ℃ is crystalline, the silicon carbide deposited at 1050 ℃ is mainly oriented at (111), and the deposited silicon carbide at 1250 ℃ is oriented at (220). Deposition temperature increases, deposition depth and uniformity decreases. The deposition temperature of the prepared C / SiC composites was 1100-1150 ℃. The deposition temperature of the three-dimensional braided C / SiC composites was about 1000-1050 ℃.