发光二极管具有体积小、耗电少、调制性能好等优点,目前已广泛用于各个领域,它的辐照损伤研究曾有不少文章评论过,通过辐射损伤的研究,可以对管子的性能、辐射损伤机理及加固方法提供有价值的数据。我们利用200keV中子发生器,由T(d,n)~4He反应得到14MeV中子在室温条件下辐照发光二极管,并用光电倍加管、脉冲高度分析器测量在不同累积中子通量辐照下发光强度,从而得到发光二极管的光强变化与累积中子通量的关系,并初步确定辐射损伤常数。 Light-emitting diodes with small size, low power consumption, good modulation performance, etc., has been widely used in various fields, its radiation damage studies have many articles commented, through the study of radiation damage, the tube performance, Radiation damage mechanisms and reinforcement methods provide valuable data. We use a 200 keV neutron generator to obtain 14MeV neutrons by reaction of T (d, n) ~4He. The photoluminescent tubes were irradiated by photomultiplier tube and pulse height analyzer at different cumulative neutron fluxes Under the luminous intensity, the relationship between the light intensity of the LED and the cumulative neutron flux is obtained, and the radiation damage constant is determined.