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以解析分析理论为基础,研究长方形Nd∶YVO4激光晶体受到具有高斯分布半导体激光侧端面抽运时,晶体温度场和热形变的分布情况。通过对激光二极管(LD)侧面抽运晶体工作特点分析,建立了符合实际工作情况的热模型,利用正交各向异性材料热传导方程,得出长方形Nd∶YVO4晶体温度场和热形变场通解表达式,并提出了两种有效减小晶体热形变的方法。研究结果表明,当使用输出功率为30 W的激光二极管侧面中心抽运Nd∶YVO4激光晶体时,在抽运端面中心获得240.0℃最高温升和4.73μm最大热形变量。偏心0.6 mm时,端面最大热形变量减少31.1%。晶体厚度减小30%时,端面最大热形变量减少23.5%。
Based on analytic theory, the distribution of crystal temperature field and thermal deformation of a rectangular Nd: YVO4 laser crystal under the laser end-pumped by Gaussian distribution is studied. By analyzing the operating characteristics of laser diode (LD) lateral pumping crystal, a thermal model is established according to the actual working conditions. By using the thermal conductivity equation of the orthotropic material, the general solution of the temperature field and the thermal deformation field of the Nd: YVO4 crystal And proposed two methods to effectively reduce the thermal deformation of the crystal. The results show that the maximum temperature rise of 240.0 ℃ and the maximum thermal deformation of 4.73μm are obtained at the center of the pumping face when Nd: YVO4 laser crystal is pumped by using a side-centered laser diode with 30 W output power. When the eccentricity is 0.6 mm, the maximum thermal deformation of the end face decreases by 31.1%. When the thickness of the crystal is reduced by 30%, the maximum thermal deformation of the end face is reduced by 23.5%.