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报道了在钝化界面进行低能等离子体植氢优化的n+-on-p碲镉汞(HgCdTe)中波(MW,mid-wavelength)光伏红外探测芯片的研究成果.基于由采用分子束外延技术生长的HgCdTe薄膜材料,通过注入阻挡层的生长、注入窗口的光刻、形成光电二极管的B+注入、钝化介质膜的生长、优化钝化界面的等离子体植氢、金属化和铟柱列阵的制备等工艺,得到了钝化界面植氢优化的HgCdTe中波红外探测芯片.从温度为78K的电流与电压(I-V)和动态阻抗与电压(R-V)特性曲线中,发现钝化界面植氢优化的HgCdTe红外中波探测芯片的光电二极管开启电压比未经过植氢处理的增加了50mV左右,零偏与反偏动态阻抗提高了10倍,且正向串连电阻也明显减小.这表明钝化界面等离子体植氢处理可以抑制HgCdTe中波光电二极管的暗电流和优化探测芯片的欧姆接触,从而能提高中波红外焦平面探测器的探测性能.
This paper reports the research results of low-energy plasma hydrogen-optimized n + -on-p HgCdTe mid-wavelength (MW) mid-wavelength photodetector infrared (IR) detection chip at the passivation interface.Based on the results obtained by molecular beam epitaxy HgCdTe thin film material by implanting a barrier layer for growth, implanting a window for lithography, forming a photodiode B + implant, passivating a dielectric film for growth, optimizing a passivating interface for plasma hydrogenation, metallization, and indium column array HgCdTe medium-wave infrared detector chip with hydrogen passivation optimized at the interface was obtained.From the current and voltage (IV) and the dynamic impedance and voltage (RV) curves at 78K, it was found that hydrogenation at the passivation interface Of HgCdTe infrared medium wave detection chip photodiode turn-on voltage than without hydrogen treatment increased about 50mV, zero bias and reverse bias dynamic impedance increased by 10 times, and forward series resistance is also significantly reduced.This shows that blunt The plasma interface hydrogenation treatment can restrain the dark current of the HgCdTe middle wave photodiode and optimize the Ohmic contact of the detection chip so as to improve the detection performance of the mid-wave infrared focal plane detector.