即使进入了1989年开始的亚100ps时代,硅双极的优势也并没有动摇。无负载的门廷时已达到80ps左右并快速地应用到系统中。展望未来可以预测到,它将以每4年提高3倍的速率实现高速化,并能可靠地提供1万门以上规模的LSI,这一切将会牢固地支撑着人们常说的“硅王国”。向硅双极挑战的GaAs LSI的研制,以美国为主,集成度已提高到1万门,它正以低功耗为武器积极攻占计算机市场。不过,许多大厂家当前都采取了对LSI不急于求成,而以通信设备用的MSI为主,扩大自己战线的战略方针。 Even though it entered the era of sub-100ps that began in 1989, the advantages of silicon bipolar have not wavered. Unloaded doors have reached 80ps and are quickly applied to the system. Looking ahead, it can be predicted that it will achieve high speed at a rate of 3 times every 4 years, and it can reliably provide an LSI with a size of more than 10,000. All this will firmly support what people often call the “Silicon Kingdom”. . The development of GaAs LSI for silicon bipolar challenge is mainly based in the United States, and its integration has been increased to 10,000 gates. It is actively attacking the computer market with low power as a weapon. However, many large manufacturers are currently adopting a strategic approach to LSI, which is not in a hurry to achieve success, and MSI, which is used in communication equipment, to expand their front lines.