A new electroluminescent material tris-[5-choloro-8-hydroxyquinoline] aluminum has been synthesized and characterized. Solution of this material Al(5-Clq)3 in toluene showed absorption maxima at 385 nm which was attributed to the moderate energy( – *) transitions of the aromatic rings. The photoluminescence spectrum of Al(5-Clq)3 in toluene solution showed a peak at 522 nm. This material shows thermal stability up to 400 ℃. The structure of the device is ITO/0.4 wt%F4-TCNQ doped α-NPD(35 nm) / Al(5-Clq)3(30 nm) / BCP(6 nm) /Alq3(30 nm) / Li F(1 nm) / Al(150 nm). This device exhibited a luminescence peak at 585 nm(CIE coordinates,xD0.39, yD0.50). The maximum luminescence of the device was 920 Cd/m2 at 25 V. The maximum current efficiency of OLED was 0.27 Cd/A at 20 V and maximum power efficiency was 0.04 lm/W at 18 V. A new electroluminescent material tris- [5-choloro-8-hydroxyquinoline] aluminum has been synthesized and characterized. Solution of this material Al (5-Clq) 3 in toluene showed absorption maxima at 385 nm which was attributed to the moderate energy *) transitions of the aromatic rings. The photoluminescence spectrum of Al (5-Clq) 3 in toluene solution showed a peak at 522 nm. This structure shows the thermal stability up to 400 ° C. The structure of the device is ITO / 0.4 wt% F4-TCNQ doped α-NPD (35 nm) / Al (5-Clq) 3 (30 nm) / BCP (6 nm) / Alq3 (30 nm) / Li F (1 nm) / Al device exhibited a luminescence peak at 585 nm (CIE coordinates, xD0.39, yD0.50). The maximum luminescence of the device was 920 Cd / m2 at 25 V. The maximum current efficiency of OLED was 0.27 Cd / A at 20 V and maximum power efficiency was 0.04 lm / W at 18 V.