论文部分内容阅读
传统设计中平衡温度时的带隙基准电压值是与工艺相关联的定值。主要基于通用的带隙技术讨论在CMOS工艺中基准产生的设计,在对基准产生原理与传统电路结构分析的基础上,设计出一种高PSRR输出可调带隙基准电压源。电路综合温度补偿、电流反馈和电阻分压技术,采用CSMC 0.5μm CMOS混合信号工艺实现,并用Cadence的Spectre进行了仿真优化。仿真结果表明,带隙基准电压源在-15~80℃范围内输出为603.5 mV时的温度系数为6.84×10-6/℃,在1.8~5 V电路均可正常工作。流片后的测试结果验证了该方法的可行性,基准电压中心值可宽范围调整,各项性能参数满足设计要求。
The bandgap reference voltage at equilibrium temperature in traditional designs is a process-dependent setting. Based on the general bandgap technique, the design of the reference generation in the CMOS process is discussed. Based on the principle of the reference generation and the analysis of the traditional circuit structure, a high PSRR output bandgap voltage reference is designed. Circuit temperature compensation, current feedback and resistor divider technology, using CSMC 0.5μm CMOS mixed signal technology, and with Cadence Specter simulation optimization. The simulation results show that the temperature coefficient of the bandgap voltage reference is 6.84 × 10-6 / ℃ when the output voltage is 603.5 mV in the range of -15 ~ 80 ℃, and the circuit can work normally in the 1.8 ~ 5 V circuit. The test results after flow sheet verify the feasibility of the method, the reference voltage center value can be widely adjusted, the performance parameters to meet the design requirements.