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本文报导了用卤素灯作加热源的快速退火系统研究Si~+注入高纯SI-GaAs的快速退火特性,得到了良好的注入激活层,发现P~+共注入可改善Si~+注入层的质量,得到了4600～4700cm~2/V·s的迁移率和75～85％的激活率,这一结果优于没有P~+共注入的情况。PLTS测试显示深能级的浓度有所降低,数量有所减少。我们认为磷原子占据砷空位使得激活率和平均霍尔迁移率提高。用这种退火方法制成了6GHz下输出功率为0.5W,相关增益为3.5dB的功率MESFET。
In this paper, the rapid annealing system using halogen lamps as heating source was investigated to investigate the rapid annealing properties of Si ~ + implanted high purity SI-GaAs. A good injection activation layer was obtained. It was found that P ~ + co- Mass, the mobility of 4600 ~ 4700cm ~ 2 / V · s and the activation rate of 75 ~ 85% were obtained, which is better than the case without P ~ + co-injection. The PLTS test showed a decrease in the levels of deep levels and a decrease in the number. We believe that the occupation of arsenic vacancies by phosphorus atoms leads to an increase in the activation rate and the average Hall mobility. Using this annealing method, a power MESFET with an output power of 0.5 W and a gain of 3.5 dB at 6 GHz was fabricated.