论文部分内容阅读
日立制作所成功地研制了具有高速存取功能的静态列式256k CMOS动态RAM,从1985年4月起推出试制原样;这种存贮器以静态列方式工作,如果对某一单元进行存取,那么对于含有该存贮单元的行里的其他单元来说可以像高速静态RAM那样进行取数;普通类型的256k DRAM的取数时间为100ns,而这种静态列式的256k DRAM快达50ns;为了达到高速,芯片上的外围电路使用了CMOS静态电路;这种256k DRAM适合用作清晰度很高的CRT图象存储器或高速计算机中的主存贮器。
Hitachi has succeeded in developing a static column type 256k CMOS dynamic RAM with high-speed access function, and has been trial-produced since April 1985. Such a memory operates in a static column mode. If a cell is accessed , Then the other cells in the row containing the memory cell can be fetched like high speed static RAM; the normal type 256k DRAM fetch time is 100ns, whereas the static column 256k DRAM is as fast as 50ns ; To achieve high speed, peripheral circuitry on the chip uses CMOS static circuitry; this 256k DRAM is suitable for use as a main memory in high resolution CRT image memories or high speed computers.