论文部分内容阅读
本文论述了器件在快速中子脉冲群的辐照以后,有关迅速退火的几种新工艺。已发现“劈出”(breakout)器件的退火响应和已有工艺模型的预计值相一致。并给出了从已有模型得到的分析表达式。几种“劈出”器件的研究结果表明:根据某些工艺研究制造出来的数学集成电路,中子辐照强度可超过1×10~(15)NVT(E>10K-eV)。此外还介绍了FAST和ALS与非门的中子辐照响应数据。
This article discusses several new processes for rapid annealing after the device is irradiated by fast neutron impulses. It has been found that the annealing response of a “breakout” device is consistent with the predicted value of the existing process model. The analytical expressions obtained from the existing models are given. The results of several “split” devices show that the neutron irradiation intensity can exceed 1 × 10 ~ (15) NVT (E> 10K-eV) based on the mathematic ICs fabricated by some processes. In addition, FAST and ALS and non-gate neutron radiation response data are also introduced.