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采用激光诱导掺锌的方法提高了常规GaN基外延片p-GaN层的空穴浓度,并将它制备成小功率白光发光二极管(LED).对其光电性能做了详细的测量并进行了加速老化实验和分析.结果表明,与常规LED相比,经过激光诱导p-GaN层掺锌LED的光电性能获得了明显改善:正向工作电压VF从3.33V降到3.13V,串联电阻从30.27Ω降到20.27Ω,室温下衰退系数从1.68×10-4降到1.34×10-4,老化1600h后的反向漏电流从超过0.2μA降为不超过0.025μA,器件的预测寿命延长了41%.器件光电性能改善的主要原因是激光诱导掺锌使LED的p-型欧姆接触改善和热阻降低所致.
The method of laser-induced zinc doping increases the hole concentration of the p-GaN layer in a conventional GaN-based epitaxial wafer and prepares it into a low-power white light-emitting diode (LED). The photoelectric properties thereof are measured in detail and accelerated Aging experiments and analysis.The results show that compared with conventional LED, the laser-induced photovoltaic performance of p-GaN doping zinc LED has been significantly improved: the forward voltage VF decreased from 3.33V to 3.13V, the series resistance from 30.27Ω To 20.27Ω, the decay coefficient decreased from 1.68 × 10-4 to 1.34 × 10-4 at room temperature, and the reverse leakage current decreased from over 0.2μA to less than 0.025μA after aging for 1600h. The predicted life expectancy of the device was prolonged by 41% The main reason for the improvement of the photoelectric properties of the devices is that the laser-induced doping of zinc improves the p-type ohmic contact of the LED and reduces the thermal resistance.