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用光调制反射谱(PR)测量了三块应变层 In_xGa_(1-x)As/GaAs 量子阱多重结构样品,每块样品中包含宽度为140、80、50、30和20A的量子阱.在300K和77K的PR谱中观察到各个量子阱的11H和11L光跃迁.根据PR数据用包络函数法进行分析,估算了量子阱中In的成分.在解释300K和77K实验结果时考虑了流体静压形变势常数的温度依赖性.实验和理论最佳符合时求得导带边不连续性在300K为0.7,77K为0.66.
Three strained In_xGa_ (1-x) As / GaAs quantum well multi-structure samples were measured by light-modulated reflection spectra (PR), each containing 140, 80, 50, 30 and 20A quantum wells. The 11H and 11L optical transitions of the individual quantum wells were observed in the PR spectra of 300K and 77K.The composition of In in the quantum well was estimated by the envelope function method based on the PR data.The fluid was considered in interpreting the results of the 300K and 77K experiments The temperature dependency of the static pressure deformation constant is determined by the best agreement of the experimental and theoretical results.