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禁带宽度是硅晶体管的一个重要物理参数,本文根据晶体管pn发射结反向饱和电流和正向偏置电压的温度特性,提出了利用线性外推法确定硅晶体管各区域在0K时的禁带宽度的新方法。由于发射区重掺杂,还考虑了载流子的简并情况。本文主要取决于直流参量的温度特性,所得结果比较精确。 结果如下:对于发射区掺杂浓度N_E=1×10~(20)cm~_3,其禁带宽度E_(gE0)=1.056eV;对于集电区掺杂浓度N_C=5×10~(15)cm~(-3),其禁带宽度E_(gC0)=1.198eV。
Forbidden band width is an important physical parameter of the silicon transistor. According to the temperature dependence of the reverse saturation current and the forward bias voltage of the transistor pn, a linear extrapolation method is proposed to determine the bandgap of each region of the silicon transistor at 0K The new method Due to the heavily doped emitter region, degeneracy of carriers is also considered. This paper mainly depends on the temperature characteristics of DC parameters, the results obtained more accurate. The results are as follows: For the emitter doping concentration N_E = 1 × 10 ~ (20) cm ~ _3, the forbidden band width E_ (gE0) = 1.056eV; for the collector doping concentration N_C = 5 × 10 ~ (15) cm ~ (-3), the band gap E_ (gC0) = 1.198eV.