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本文报道了用选择性低压化学汽相淀积钨和石墨快速退火降低金属与扩散形成的n~+、p~+浅结的接触电阻率.发现硼扩散或磷扩散浓度以及退火温度对接触电阻率都有影响,钨硅之间无明显的相互扩散.采用这种技术,钨与n~+、p~+硅的接触电阻率分别低达(1.5～4)×10~(-7)和(1～3)×10~(-7)Ω·cm~2.但与掺杂浓度较低的掺硼硅的接触电阻率较大.
In this paper, the contact resistivity of n ~ +, p ~ + shallow junctions formed by selective diffusion of low-pressure chemical vapor deposition of tungsten and graphite was studied to reduce the diffusion of metals and diffusion.The results show that the boron diffusion or phosphorus diffusion concentration and the annealing temperature have a great influence on the contact resistance The ratio of tungsten to silicon has no significant interdiffusion.With this technique, the contact resistivities of tungsten and n ~ +, p ~ + silicon are as low as (1.5 ~ 4) × 10 ~ (-7) and (1 ~ 3) × 10 ~ (-7) Ω · cm ~ 2, but the contact resistivity of boron-doped silicon with lower doping concentration is larger.