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高内应力是阻碍高性能超硬四面体非晶碳(tetrahedral amorphous carbon,ta-C)膜长厚和广泛应用的主要因素。为降低ta-C膜内应力,本文采用金属蒸汽真空弧(metal vapor vacuum arc,MEVVA)离子源注入技术,注入Ni离子到用磁过滤阴极真空弧(filtered cathodic vacuumarc,FCVA)沉积的ta-C膜中,制备出掺Ni膜(ta-C:Ni膜)。用XPS、XRD、Raman谱和SEM表征膜的微观结构。结果显示,膜sp3含量减小,发生了石墨化,石墨颗粒细化;Ni在膜中以单质Ni的形式存在,并且有Ni纳米晶体析出;膜表面均匀分布约10nm颗粒。对膜在结构上的变化作了讨论。
High internal stress is a major factor hindering the growth and widespread use of high performance tetrahedral amorphous carbon (ta-C) films. In order to reduce the stress in the ta-C film, a metal vapor vacuum arc (MEVVA) ion source implantation technique was used to inject Ni ions into the ta-C layer deposited by magnetic filtration cathodic vacuumarc (FCVA) Film, a Ni-doped film (ta-C: Ni film) was prepared. The microstructure of the films was characterized by XPS, XRD, Raman spectroscopy and SEM. The results showed that the content of sp3 decreased, graphitization and graphite grain refinement occurred. Ni was present in the form of elemental Ni and precipitated with Ni nanocrystals. The surface of the film was uniformly distributed with about 10 nm particles. The structural changes of the membrane are discussed.