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报道了利用As4 作为掺杂源获得原位As掺杂MBEHgCdTe材料的研究结果.利用高温退火技术激活As使其占据Te位形成受主.对原位As掺杂MBEHgCdTe材料进行SIMS及Hall测试,证实利用原位As掺杂及高温退火可获得P型MBEHgCdTe材料.
The results of the study on in-situ As-doped MBEHgCdTe using As4 as doping source were reported. As was activated by high-temperature annealing to occupy the Te sites to form acceptors. SIMS and Hall tests were performed on in-situ As-doped MBEHgCdTe materials, P-type MBEHgCdTe material can be obtained by in-situ As doping and high temperature annealing.