通过水合肼和氢碘酸分别对氧化石墨烯薄膜进行还原处理,制备出不同形态的石墨烯材料,并采用XRD、FT-IR、SEM及TEM等对实验样品进行结构表征。结果表明:氧化石墨烯薄膜在水合肼中由于完全分散导致还原更加彻底,而在氢碘酸中由于依旧保持薄膜状导致还原程度较低,但经由氢碘酸还原后保持薄膜状的石墨烯因为结构完整、致密度高从而具有更好的导电性能,方块电阻最低为10Ω/□。 Graphene oxide films were prepared by reduction of graphene oxide by hydrazine hydrate and hydroiodic acid respectively. The structures of the samples were characterized by XRD, FT-IR, SEM and TEM. The results show that the graphene oxide film is completely dispersed in the hydrazine hydrate, and the reduction is more complete in the case of hydriodic acid, but the graphene remains in the film state after being reduced by hydroiodic acid because of the low degree of reduction. Complete structure, high density and thus have better electrical conductivity, the lowest sheet resistance of 10Ω / □.