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三价稀土离子掺杂半导体纳米晶具有独特的光学性能,其在光电子器件、平板显示和荧光生物标记等方面的潜在应用前景,获得了人们的普遍关注.本文从材料制备、光谱性能、电子能级结构及能量传递机理等几个方面系统总结了近年来稀土掺杂半导体纳米晶的最新研究进展.本文重点综述了通过湿化学方法把稀土离子掺杂进入半导体纳米晶晶格位置的合成策略、稀土离子在半导体纳米晶中的格位分布及半导体纳米晶到稀土离子能量传递机理.同时,还总结了近年来通过能级拟合计算来探索稀土在半导体纳米晶中的能级结构和晶体场参数的工作.这些方面的研究对于深入理解稀土掺杂半导体纳米晶的光物理具有重要意义.最后,针对稀土掺杂半导体纳米晶未来的发展趋势与努力的方向作了进一步的前景展望.
Trivalent rare earth ion-doped semiconductor nanocrystals have unique optical properties and their potential applications in optoelectronic devices, flat panel displays and fluorescent biomarkers have attracted widespread attention.In this paper, the preparation, spectral properties, electron energy Level structure and energy transfer mechanism and other aspects systematically summarizes the latest research progress of rare earth doped semiconductor nanocrystals in recent years.In this paper, the synthetic strategy of wet chemical methods doped rare earth ions into the semiconductor nanocrystal lattice location, The distribution of rare earth ions in the semiconductor nanocrystals and the energy transfer mechanism of semiconductor nanocrystals to rare earth ions.At the same time, the energy level fitting calculations in recent years are also reviewed to explore the energy levels of rare earths in semiconductor nanocrystals and the crystal field The research of these aspects is of great significance for the further understanding of the photophysics of rare earth-doped semiconductor nanocrystals.Finally, the future prospects and future directions of rare earth-doped semiconductor nanocrystals are prospected.