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以三氯甲基硅烷(CH3SiCl3,MTS)为碳化硅源,采用化学气相沉积(CVD)的方法,在去胶炭纤维表面沉积一层碳化硅薄膜。采用SEM及N2等温吸附观察的方法,分析了薄膜处理对炭纤维表面结构的影响。结果表明:CVD碳化硅薄膜能够修复炭纤维表面的微孔和裂纹等缺陷,使纤维表面更光滑,可以改变纤维的表面结构特性,使炭纤维的BET比表面积和BJH累积孔体积降低,从而降低炭纤维表面吸附能力。采用单丝拉伸试验机进行力学分析,通过干烧对比实验发现:在CVD过程中,考虑沉积气氛对纤维损伤的影响,炭纤维在CVD碳化硅薄膜修复后,抗拉强度和弹性模量分别提高了6.7%和8.2%。
A layer of silicon carbide film was deposited on the surface of carbonized carbon fiber by chemical vapor deposition (CVD) using trichloromethylsilane (CH3SiCl3, MTS) as the silicon carbide source. Using SEM and N2 isothermal adsorption observation method, the influence of film treatment on the surface structure of carbon fiber was analyzed. The results show that the CVD silicon carbide films can repair defects such as pores and cracks on the surface of carbon fibers and make the surface of the fibers more smooth. The surface structure of the fibers can be changed so that the BET specific surface area and the cumulative pore volume of BJH decrease Carbon fiber surface adsorption capacity. The mechanical analysis was carried out by the monofilament tensile testing machine. Comparing the experiment of dry burning, it was found that in the CVD process, considering the influence of deposition atmosphere on the fiber damage, the tensile strength and elastic modulus of the carbon fiber after CVD silicon carbide film repaired respectively Increased by 6.7% and 8.2%.