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本文研究了Schafer和Lyon最近提出的关于硅的快速始初氧化模型的基本假设。发现其中一些基本假设与已有的实验结果相矛盾。进而,本文采用作者曾经提出的氧化模型对Schafer-Lyon实验进行了解释,得到了令人满意的结果:理论不仅能相当满意地描述Scha-fer-Lyon测得的实验曲线,而且利用该理论中的关系式算得的氧化层中的薄层电荷密度和氧在SiO_2中的平衡浓度与其他作者用其他方法测得的实验结果十分符合。
This paper studies the basic assumptions recently made by Schafer and Lyon about the rapid initial oxidation of silicon. Found some of the basic assumptions contradict the existing experimental results. In addition, the Schafer-Lyon experiment was explained by the oxidation model which the author proposed in the paper. The satisfactory results were obtained. The theory can not only describe the experimental curve measured by Scha-fer-Lyon quite satisfactorily, but also use this theory The calculated charge density of the oxide layer and the equilibrium concentration of oxygen in SiO 2 are in good agreement with the experimental results measured by other authors.