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对于介质隔离的氧化层必须结构致密,缺陷少,以保证较好的隔离特性。通常在外延炉里淀积的二氧化硅层由于各种原因质量较差,有时还会出现多晶生长不上的现象,且厚度及质量难以检测。用热生长法代替淀积法形成的二氧化硅层,结构致密、缺陷少,仅做30分钟的干氧,即可达百伏以上的耐压。介质隔离的反外延时间长,耗源量多,对设备损耗大。用喷头结构可使气流直接喷在硅片上,使源充分利用,从而提高了多晶硅的生长速率,时间由原来的6个多小时缩短为3个多小时,用源量只相当于原来的五分之一左右。且多晶硅的厚度均匀。
For medium isolation oxide layer must be compact structure, fewer defects, to ensure better isolation characteristics. Silica layers, which are usually deposited in epitaxial furnaces, are sometimes poor in quality for a variety of reasons and sometimes suffer from polygrystalline growth and are difficult to detect in terms of thickness and quality. The silicon dioxide layer formed by the thermal growth method instead of the deposition method has the advantages of compact structure and few defects, and only withstands 30 hours of dry oxygen to withstand the breakdown voltage of over 100V. Anti-extension of media isolation for a long time, more power consumption, loss of equipment. With the nozzle structure allows the air jet directly on the silicon, make full use of the source, thereby increasing the growth rate of polycrystalline silicon, the time from the original more than 6 hours to more than 3 hours, the source of the amount of only the equivalent of five One-third or so. The thickness of polysilicon is even.