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在室温环境下，用不同的注入剂量将２４ｋｅＶ的Ｎ＋离子和３５０ｋｅＶ的Ｘｅ＋离子注入进多晶银薄膜中。对实验结果进行分析后发现，经离子注入后在银薄膜中出现了再结晶和晶粒长大现象。当注入的离子达到一定剂量时，多晶银薄膜转变成单晶银薄膜．本文对单晶银薄膜的形成机理作了探讨，认为与晶粒生长有关的主要因素是：（１）离子注入．过程中在薄膜内部产生的高密度的缺陷和位错促进了晶粒再结晶和晶粒生长。（２）由于晶格畸变而产生的界面张力为在晶粒初始再结晶以后的进一步长大提供了驱动力。（３）晶粒之间的取向差有助于晶粒的生长。（４）离子注入过程中产生的晶格弛豫效应促使薄膜中的应变能不断恢复和产生，使晶粒持续不断地再结晶而逐渐长大。（５）薄膜的基底对单晶薄膜的形成有一定影响。
At room temperature, 24 keV of N + ions and 350 keV of Xe + ions were implanted into the polycrystalline silver film with different implantation doses. The experimental results were analyzed and found that after the ion implantation in the silver film recrystallization and grain growth phenomenon. When the implanted ions reaches a certain dose, the polycrystalline silver thin film is transformed into a single crystal silver thin film. In this paper, the formation mechanism of single crystal silver film is discussed, and the main factors related to grain growth are: (1) ion implantation. High-density defects and dislocations generated inside the thin film during the process promote grain recrystallization and grain growth. (2) The interfacial tension due to the lattice distortion provides the driving force for further growth after the initial recrystallization of the grains. (3) The difference in orientation between the grains contributes to the grain growth. (4) The lattice relaxation effect generated during the ion implantation promotes the continual recovery and generation of strain energy in the film, so that the crystal grains continuously recrystallize and gradually grow up. (5) The base of the thin film has a certain influence on the formation of the single crystal thin film.