在半导体测量中,常规方法是把金属探针压接在半导体硅单晶表面上,电流通过金属探针与晶体表面的接触点流到体内,以探索晶体的各种性质。金属探针要求选用坚硬、耐磨的低阻材料。如合金钢、碳化钨、锇钨金属、锇钌合金等。所用的探针尖的磨损将给测量结果带来不可忽略的系统误差。本文以四探针法为例,在不考虑电压测量、电流大小、探针间距测量及 In semiconductor measurement, the conventional method is to crimp the metal probe on the surface of the semiconductor single crystal silicon, and the current flows into the body through the contact point between the metal probe and the crystal surface to explore the various properties of the crystal. Metal probe requires the selection of hard, wear-resistant low-resistance materials. Such as alloy steel, tungsten carbide, osmium tungsten metal, osmium ruthenium alloy. The wear of the probe tips used will bring non-negligible systematic errors to the measurement results. In this paper, four-probe method, for example, does not consider the voltage measurement, current size, probe spacing measurement and