在常用的PECVD电容式耦合沉积系统中,使用高氢稀释硅烷为反应气氛,在r.f.+DC双重功率源激励下制备出具有纳米相结构的硅薄膜.使用HREM,Raman光散射,X射线衍射以及红外和紫外光谱分析手段广泛地检测了其结构特征.指出,纳米硅(nc-Si:H)薄膜由于具有一系列新的结构特征使它脱颖于熟知的 a-Si:H及 μc-Si:H范畴,从而显示出它自己的独特性能. In common PECVD capacitive coupled deposition system, a high-hydrogen diluted silane is used as a reaction atmosphere to prepare a thin film of silicon with a nanophase structure excited by a rf + DC dual power source. HREM, Raman scattering, X-ray diffraction and The structural features of the nanocrystalline silicon (nc-Si: H) thin films have been elucidated by a series of new structural features due to their wide range of infrared and ultraviolet spectral analysis. : H category, which shows its own unique performance.