论文部分内容阅读
改变 GDa-Si_(1-x)Ge_x∶H 薄膜中 Ge 的含量,可以获得1.8—0.9eV 的带隙能量范围。对于x>0.3的薄膜,准费米能级的位置接近带隙的中央,电导激活能随 x 值的增加而线性地减小。光敏感性(σ_p/σ_d)在 x 从0变化到1的整个范围内下降4个数量级。实验表明,选择合适的衬底温度(T_s=250～300℃)以及较低的射频功率可以得到质量较好的 a—Si_(1-x)Ge_x∶H 薄膜。
By changing the content of Ge in GDa-Si_ (1-x) Ge_x:H thin films, a bandgap energy range of 1.8-0.9eV can be obtained. For films with x> 0.3, the quasi-Fermi level is located close to the center of the bandgap, and the conductance activation energy decreases linearly with increasing x value. Light sensitivity (σ_p / σ_d) decreases by 4 orders of magnitude over the entire range of x from 0 to 1. Experiments show that the better quality a-Si 1-x Ge x: H thin films can be obtained by choosing the appropriate substrate temperature (T_s = 250 ~ 300 ℃) and lower RF power.