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建立了CMOS电子元器件中质子、电子和光子辐照损伤 (电子 空穴对和离位原子浓度 )计算模型。利用微机化的电子 光子簇射过程模拟程序EGS4和TRIM程序分别计算了电子 ( β)、光子 (γ)和质子 ( p)辐照在CMOS器件各层中产生的电子 空穴对和离位原子浓度。计算结果表明 ,在CMOS器件桥结绝缘层中 ,电子产生的电子 空穴对和离位原子浓度最高 ,光子次之 ,质子最低 ,这表明电子辐照损伤最高 ,光子次之 ,质子最小。
The computational models of proton, electron and photon irradiation damage (electron-hole pairs and out-of-position atomic concentration) in CMOS electronic components are established. The electron-hole pairs and out-of-position atoms generated in the layers of CMOS devices by electron (β), photon (γ) and proton (p) radiation were calculated by computerized electron photon shower process simulation program EGS4 and TRIM program respectively. concentration. The calculated results show that in the bridged insulating layer of the CMOS device, the concentration of electron-hole pairs and out-of-atoms generated by the electrons is the highest, followed by the photons, and the lowest is the proton. This shows that the damage of the electron is the highest, followed by the photon, and the proton is the smallest.