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基于金属辅助硅化学刻蚀发展了一种无掩模选择性区域制备硅纳米线阵列的方法,并利用该方法成功制备了图形化的硅纳米线阵列.扫描电子显微镜(scanning electron microscope,SEM)分析表明,所制备的硅纳米线阵列是高质量的多孔微纳米结构,并利用拉曼光谱仪研究了室温下硅纳米线阵列的光致发光特性.结果表明,硅纳米线阵列可实现有效的光发射,发光波峰为663 nm.该方法工艺简单、有效,可潜在地应用于构筑硅基光电集成器件.
A method of preparing silicon nanowire arrays with maskless selective regions was developed based on the metal-assisted chemical etching, and the patterned silicon nanowire arrays were successfully prepared by using this method.Finally, scanning electron microscope (SEM) The analysis shows that the prepared silicon nanowire arrays are of high quality porous micro-nano structure and the photoluminescence properties of the silicon nanowire arrays at room temperature are investigated by Raman spectroscopy. The results show that the silicon nanowire arrays can achieve effective light Emitting and emitting peak of 663 nm.The method is simple and effective and can be potentially applied to the construction of silicon-based optoelectronic integrated devices.