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研究了MOCVD生长的具有双发射峰结构的InGaN/GaN多量子阱发光二极管(LED)的结构和发光特性.在透射电子显微镜(TEM)下可以发现量子阱的宽度不一致,电致发光谱(EL)发现了位于2.45eV的绿光发光峰和2.81eV处的蓝光发光峰.随着电流密度增加,双峰的峰位没有移动,直到注入电流密度达到2×104mA/cm2时,绿光发光峰发生蓝移,而蓝光发光峰没有变化.单色的阴极荧光谱(CL)发现绿光发射对应的发光区包括絮状区域和发光点,而蓝光发射对应的发光区仅包含絮状区域.通过以上的结果,我们认为蓝光发射基本上源于InGaN量子阱发光,而绿光发射则起源于量子阱和量子点的发光.
The structures and luminescence properties of InGaN / GaN MQWs with double emission peak structure grown by MOCVD have been studied. The widths of the quantum wells can be found to be inconsistent under TEM. Electro-luminescence (EL) ) Found a green emission peak at 2.45eV and a blue emission peak at 2.81eV. As the current density increased, the peak of the doublet did not move until the injection current density reached 2 × 104mA / cm2, the green emission peak And the blue luminescence peak does not change.The monochromatic cathode fluorescence spectrum (CL) found that the green light emitting region corresponding to the light-emitting region includes the flocculent region and the light-emitting point, and the blue light emission corresponding to the light-emitting region contains only the flocculent region by The above results, we believe that the blue light emission is basically derived from the InGaN quantum well light, and green light emission is derived from quantum wells and quantum dots of light.