论文部分内容阅读
采用水热法,以3 mol/L的KOH作为矿化剂,在260℃下,保温24 h左右,进行Ni掺杂(x=0.1 mol),合成Zn1-xNixO稀磁半导体晶体。XRD测试表征以KOH作为矿化剂能够制备出发育良好的Zn0.9Ni0.1O稀磁半导体晶体,没有其它杂质相的产生。通过UV/Vis测试进一步说明掺杂的效果,掺杂使ZnO的禁带宽度降低至3.18 eV。FE-SEM测试显示所制备的晶体呈现长柱状。VSM测试表明,所制备的样品Zn0.9Ni0.1O在室温下表现出铁磁性。文章采用水热法制备出了具有铁磁性能的稀磁半导体粉体。
Hydrothermal method was used to synthesize Zn1-xNixO dilute magnetic semiconductor crystals by Ni doping (x = 0.1 mol) with 3 mol / L KOH as mineralizer at 260 ℃ for 24 h. Characterization by XRD The well-developed Zn0.9Ni0.1O diluted magnetic semiconductor crystal with KOH as mineralizer can be prepared without any other impurity phase. The effects of doping were further demonstrated by the UV / Vis test, which doping reduced the bandgap of ZnO to 3.18 eV. The FE-SEM test showed that the prepared crystal was long columnar. VSM test showed that the prepared sample Zn0.9Ni0.1O showed ferromagnetism at room temperature. In this paper, dilute magnetic semiconductor powder with ferromagnetic properties was prepared by hydrothermal method.