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a Si TFT 是有源矩液晶显示器件的关键元件，为了得到最佳的特性，除了改进用于制造a Si TFT的材料外，a Si TFT的几何结构达到最佳化是非常重要的。显然，a-Si TFT激活层的厚度效应应当被考虑。在本文中，在两个方面研究了a-Si TFT激活层的厚度效应，即弱场情况和常带宽状态或是费米能级移动密度减小方向的情况。详尽的讨论表明a-Si TFT的关态电流，开态电流以阈值电压等特性不仅与材料特性相关，而且与a-Si TFT结构设计紧密相关。
a Si TFT is a key component of active-matrix liquid crystal display devices. For best performance, it is important to optimize the geometry of the a Si TFT except for the material used to make the a Si TFT. Obviously, the thickness effect of a-Si TFT active layer should be considered. In this paper, the thickness effect of a-Si TFT active layer is studied in two aspects, that is, the weak field condition and the normal bandwidth condition or the decrease direction of the Fermi level moving density. Detailed discussion shows that the off-state current of the a-Si TFT, the on-state current threshold voltage and other characteristics not only related to the material properties, but also closely related to the a-Si TFT structure design.