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采用气态源分子束外延在InP衬底上生长InAs/InGaAs数字合金应变补偿量子阱激光器.有源区的多量子阱结构由压应变的InAs/In_(0.53)Ga_(0.47)As数字合金三角形势阱和张应变的In_(0.43)Ga_(0.57)As势垒构成.X射线衍射测试表明赝晶生长的量子阱结构具有很高的晶格质量.在100K、130mA连续波工作模式下,激光器的峰值波长达到1.94μm,对应的阈值电流密度为2.58 kA/cm~2.随着温度升高,激光器的激射光谱出现独特的蓝移现象,这是由于激光器结构中相对较高的内部吸收和弱的光学限制引起最大增益函数斜率降低所导致的.
InAs / InGaAs digital alloy strain-compensated quantum well laser was grown on InP substrate by gas source molecular beam epitaxy.Multiple quantum well structure in the active region was composed of triangular strain of InAs / In_ (0.53) Ga 0.47 As As alloy Well and tensile strained In_ (0.43) Ga_ (0.57) As potential barrier.The X-ray diffraction (XRD) measurement shows that the quantum well structure with pseudomorphic growth has a high lattice quality.When the 100K, 130mA CW mode is used, The peak wavelength reaches 1.94 μm, corresponding to a threshold current density of 2.58 kA / cm 2. With the increase of temperature, the lasing spectrum of the laser shows a unique blue shift due to the relatively high internal absorption in the laser structure and Weak optical constraints cause the slope of the maximum gain function to decrease.