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本文通过测量n-Al_xGa_(1-x)As/n-GaAs材料的表面光电压并推导了有关的计算公式,判定其光跃迁类型,从而计算出它们的禁带宽度,确定了Al的组分x;计算出它们的少子扩散长度.测量和计算的结果与SEM方法的测量结果基本一致.
In this paper, by measuring the surface photovoltage of n-Al_xGa_ (1-x) As / n-GaAs materials and deriving the relevant formulas, the types of light transitions were determined to calculate their forbidden band width. ; Calculate their minority carrier diffusion length.The results of measurement and calculation are basically consistent with those of SEM method.