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针对ISO/IEC 18000-6C协议的应用要求,设计了一款应用于手持超高频无线射频识别(UHF RFID)读写器输出端的两级SiGe功率放大器。在设计中采用了一种新型的晶体管面积推算方法,能够根据最大输出功率的要求,较准确的推算出所需要的晶体管发射极面积,对于基于异质结双极晶体管(HBT)工艺的功率放大器设计有一定的参考价值。此外还提出了一种新型的自偏置功率检测电路结构,在保证检测性能的同时减小了芯片面积。实际测试结果显示,在3.3 V的偏压下,功率放大器在1 dB压缩点处的输出功率可以达到24.1 dBm,对应的功率附加效率为26.6%,功率检测电平为2.63 V。整体芯片面积为0.6 mm×0.72 mm。
According to the application requirements of ISO / IEC 18000-6C protocol, a two-stage SiGe power amplifier is designed for the output of handheld UHF RFID readers. A new transistor area estimation method is adopted in the design. The required transistor emitter area can be more accurately estimated according to the requirement of maximum output power. For the design of a power amplifier based on a Heterojunction Bipolar Transistor (HBT) process Have a certain reference value. In addition, a novel self-bias power detection circuit structure is proposed, which can reduce the chip area while ensuring the detection performance. The actual test results show that the output power of the PA can reach 24.1 dBm at a compression point of 1 dB at a bias voltage of 3.3 V, corresponding to a power added efficiency of 26.6% and a power detection level of 2.63 V. The overall chip area is 0.6 mm × 0.72 mm.