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介绍了近两年新报道的有机半导体材料,列举了其场效应性能参数;综述了有机场效应晶体管(OFET)在器件结构上的改进,重点阐述了基于常见有机功能层材料富勒烯及其衍生物、并五苯、聚3-己基噻吩的OFET对栅介质层及有机功能层与电极的界面的改进,讨论了器件结构改进对OFET阈值电压、开关比、载流子迁移率的影响;介绍了衬底温度、退火处理对OF-ET性能的影响。最后,针对有机场效应晶体管研究现状,指出未来研究中应注重开发高迁移率、高薄膜稳定性的有机功能材料和高介电常数、高成膜质量的有机栅介质材料,继续优化器件结构,改进制备工艺以提高器件性能。
The recent reports of organic semiconductor materials in the past two years are presented, and their field-effect performance parameters are listed. OFET is reviewed in the structural improvement of the device. Emphases are put forward on the fullerenes based on common organic functional layers and their The effect of device structure on the threshold voltage of OFET, switching ratio and carrier mobility was discussed. The improvement of the interface between the gate dielectric layer and organic functional layer and the electrode was investigated by OFET with pentacene and poly-3-hexylthiophene. The effect of substrate temperature and annealing treatment on the performance of OF-ET is introduced. Finally, according to the research status of the field-effect transistor, it is pointed out that in the future, organic mobility materials with high mobility and high film stability and organic media with high dielectric constant and high film quality should be developed. The device structure should be optimized, Improve the preparation process to improve device performance.