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本文研究了1～3MeV高能硼离子注入n-型硅衬底后n-p-n埋层结构的形成,发现采用适当的退火条件可得到良好的埋层载流子浓度及分布;并可获得单晶及电学特性恢复得很好的表面层.对各种条件退火后的样品进行了扩展电阻测量;用沟道背散射及平面电镜观察注入退火前后的表面微结构;利用剖面电镜观察到二次缺陷的存在;通过范德堡-霍尔测量,得到了样品的霍尔迁移率.
In this paper, the formation of npn buried layer structure after 1 ~ 3MeV high-energy boron ions were implanted into n-type silicon substrate was studied. It was found that good buried carrier concentration and distribution can be obtained by proper annealing conditions. Single crystal and electrical And the surface of the annealed samples were measured.The extended surface resistivity of samples annealed under various conditions was measured.The surface microstructures before and after annealing were observed by channel backscattering and plane electron microscopy.The secondary defects were observed by SEM The Hall mobility of the samples was obtained by the Vanderbilt-Hall measurement.