论文部分内容阅读
利用电学法测量器件的温升、热阻及进行瞬态热响应分析是器件热特性分析的有力工具．本文利用电学法测量了ＧａＡｓＭＥＳＦＥＴ在等功率下，加热响应曲线随电压的变化，并通过红外热像仪测量其温度分布，结果表明电学法测得的平均温度与温度分布有很大关系．理论计算也表明了这一点．在等功率条件下，电学平均温度随着温度分布趋于均匀而减少．该方法可用来判断器件的热不均匀性．
The use of electrical measurement of device temperature rise, thermal resistance and transient thermal response analysis is a powerful tool for thermal analysis of the device. In this paper, the change of the response curve of the GaAsMESFET with voltage under the equal power is measured by the electrical method, and the temperature distribution of the GaAsMESFET is measured by the infrared thermal imager. The results show that the average temperature measured by the electrical method has a great relationship with the temperature distribution. Theoretical calculations also show this point. Under equal power conditions, the average electrical temperature decreases as the temperature profile tends to be uniform. This method can be used to determine the thermal inhomogeneity of the device.