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提出了一种利用微机电系统(MEMS)制造工艺技术制备的硅基微型红外光源。该光源使用绝缘体上硅(SOI)晶片作为基底材料,其上沉积多晶硅材料并通过离子注入工艺实现材料的电阻加热发光特性,SOI晶片上的单晶硅层通过重掺杂实现辐射光背向吸收自加热效应。利用SOI晶片中的掩埋二氧化硅层为刻蚀停止层,通过背面深反应离子刻蚀(DRIE)技术制备微米量级的薄膜发光层结构。光源表面工作温度和辐射光谱分别通过红外热像仪和光谱辐射计测量得到。实验结果表明,该光源在表面温度约700 K时,1.3~14.5μm波长内的能量转换效率约为5.58%,光源的调制频率在50%的调制深度下接近40 Hz。
A silicon-based miniature infrared light source fabricated by using microelectromechanical system (MEMS) manufacturing technology was proposed. The light source uses a silicon-on-insulator (SOI) wafer as a base material on which a polysilicon material is deposited and a resistance heating luminescence property of the material is achieved by an ion implantation process. The single-crystal silicon layer on the SOI wafer undergoes back- Heating effect. Using the buried silicon dioxide layer in the SOI wafer as the etch stop layer, the structure of the light-emitting layer on the order of microns was prepared by the back-surface deep reactive ion etching (DRIE) technique. Light source surface operating temperature and radiation spectra were measured by infrared thermography and spectral radiometer. Experimental results show that the energy conversion efficiency of the light source at a wavelength of 1.3 ~ 14.5μm is about 5.58% when the surface temperature is about 700 K and the modulation frequency of the light source is close to 40 Hz at a modulation depth of 50%.