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通过模拟的方法,研究了n型4H-SiC材料中Al离子注入深度、浓度分布与注入角度、缓冲层厚度、注入能量和剂量的关系。通过不同能量和剂量的组合进行了常温注入实验,注入深度为500 nm,注入浓度均匀分布。注入完成后,以SiC上下夹片的保护方式对SiC样品在1 650和1 750℃两种退火温度下进行激活。研究温度对激活效果的影响,观察注入条件和退火保护方式对SiC样品表面粗糙度的影响。激活完成后,在SiC样品上生长了一层Ni,并进行退火,研究激活浓度对Ni与Al注入形成的p-SiC欧姆接触的影响。实验中用喇曼谱表征注入损伤,用原子力显微镜(AFM)监测退火后表面粗糙度,用霍尔测试表征激活效果。实验结果表明,以4°偏角掠射,用100 nm SiO_2作为缓冲层进行注入,以1 750℃用SiC上下夹片保护进行退火,可以得到表面粗糙度为0.862 nm、激活浓度为4.25×1019 cm~(-3)的p-SiC样品。该方法可用于指导pin二极管、JBS、MOSFET、JFET和BJT等器件的设计。
The relationship between the implantation depth and concentration of Al ion in n-type 4H-SiC material and the implantation angle, buffer layer thickness, implantation energy and dose was studied by simulation. At room temperature, experiments were carried out at different energy and dose combinations. The implantation depth was 500 nm and the implant concentration was uniform. After the implantation, SiC samples were activated at both annealing temperature of 1 650 and 1 750 ℃ with the protection of the SiC upper and lower clips. The effect of temperature on the activation effect was investigated. The effect of injection conditions and annealing protection on the surface roughness of SiC samples was observed. After activation, a layer of Ni was grown on the SiC sample and annealed to investigate the effect of activation concentration on the p-SiC ohmic contact formed by Ni and Al implantation. In the experiment, Raman spectroscopy was used to characterize the implantation damage, the surface roughness after annealing was monitored by atomic force microscope (AFM), and the Hall effect test was used to characterize the activation effect. The experimental results show that the surface roughness is 0.862 nm and the activation concentration is 4.25 × 1019 at a deflection angle of 4 ° with 100 nm SiO_2 as buffer layer and annealing at 750 ° C with SiC upper and lower clips. cm ~ (-3) p-SiC samples. This method can be used to guide the design of pin diodes, JBS, MOSFETs, JFETs, and BJTs.