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对具有不同的栅极场板结构的p-GaN栅高迁移率晶体管(HEMT)器件的性能进行了比较,利用半导体器件仿真工具Synopsys TCAD对器件电学特性进行了仿真。仿真结果表明,具有p-GaN栅的GaN HEMT器件阈值电压为1.5 V。采用栅极场板能缓解电场的集中程度,当场板长度为5μm时,器件击穿电压达到1 100 V。间断型栅极场板能在场板间隙中产生新的电场峰值,更充分地利用漂移区耐压,器件的击穿电压可达到1 271 V。栅极场板与AlGaN势垒层的距离影响场板对漂移区电场的调控作用,当栅极场板下方介质层厚度为0.24μm时,器件的击穿电压可达1 255 V。
The performance of p-GaN gate high mobility transistor (HEMT) devices with different gate field plate structures was compared. The device’s electrical characteristics were simulated by Synopsys TCAD, a semiconductor device simulation tool. The simulation results show that the threshold voltage of a GaN HEMT device with a p-GaN gate is 1.5 V. The gate field plate can ease the concentration of the electric field. When the field plate length is 5μm, the breakdown voltage of the device reaches 1,100V. Intermittent gate field plate can generate a new field peak in the field plate gap, the fuller use of the drift region withstand voltage, the device breakdown voltage up to 1271V. The distance between the gate field plate and the AlGaN barrier layer affects the field control of the field plate in the drift region. When the dielectric layer thickness below the gate field plate is 0.24 μm, the breakdown voltage of the device reaches 1,255 V.