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研究了电子辐射剂量对CMOS图像传感器性能的影响,性能参数为平均暗电流输出和光强响应度。搭建了电子辐射场和光强响应度的测量系统,在器件处于工作状态和非工作状态下分别对其辐射,辐射剂量为:5×103 rad、1×104 rad、7×104 rad、1×105 rad、5×105 rad。对于暗电流,当辐射总剂量超过7×104rad~1×105rad之间的某一个阈值时,暗电流随着辐射剂量的增长基本呈线性增加;光强响应方面,当器件处于非工作状态接受辐射时,辐射剂量对光强响应影响不大;当器件处于工作状态接受辐射时,辐射剂量超过7×104 rad,光强响应曲线会下移,斜率减小,灵敏度降低。理论分析后,得到了暗电流随电子辐射剂量的变化模型。研究表明:长期工作于空间环境下的CMOS图像传感器,容易受到辐射总剂量效应的影响,需采取一定的防辐射措施。
The influence of electron dose on the performance of CMOS image sensor is studied. The performance parameters are average dark current output and light response. A measuring system of electron radiation field and light responsivity was set up and the radiation dose was respectively 5 × 103 rad, 1 × 104 rad, 7 × 104 rad, 1 × 105 rad, 5 × 105 rad. For dark current, when the total radiation dose exceeds a certain threshold between 7 × 104 rad ~ 1 × 105 rad, the dark current increases linearly with the increase of radiation dose. For the light intensity response, when the device is in a non-operating state and receives radiation , The radiation dose has little effect on the light intensity response. When the device is in the working state and receives radiation, the radiation dose exceeds 7 × 104 rad, the response curve of the light intensity will move downward, the slope decreases, and the sensitivity decreases. After theoretical analysis, we get the model of dark current with the dose of electron radiation. The research shows that the long-term CMOS image sensor operating in the space environment is easily affected by the total dose effect of radiation and a certain amount of radiation protection measures must be taken.