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采用直流磁控溅射法分别将Cu(Ti)和Cu(Cr)合金层沉积在SiO_2/Si衬底上,随后将制得的样品在真空(2×10~(-3)Pa)中退火1 h,退火温度为300~700℃。对Cu(Ti)及Cu(Cr)自形成阻挡层进行对比研究,通过X射线衍射(XRD)、X射线光电子能谱(XPS)和透射电子显微镜(TEM)观察并表征样品的微观结构。通过半导体分析仪测试样品的电学性能,并分析了其热稳定性。结果表明,在Cu膜中分别加入少量的Ti或Cr可使Cu沿<111>晶向择优取向生长。两种样品交界面处的Cu及Si元素含量迅速下降,表明在交界面处自形成阻挡层,抑制了Cu与Si元素之间的扩散。Cu(Ti)/SiO_2/Si和Cu(Cr)/SiO_2/Si样品漏电流测试结果表明,Cr自形成的阻挡层具有更好的热稳定性。
The Cu (Ti) and Cu (Cr) alloy layers were respectively deposited on the SiO_2 / Si substrate by direct current magnetron sputtering, and then the samples were annealed in vacuum (2 × 10 -3 Pa) 1 h, the annealing temperature is 300 ~ 700 ℃. The barrier layer of Cu (Ti) and Cu (Cr) self-forming was investigated. The microstructure of the sample was observed and characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) The electrical properties of the samples were tested by a semiconductor analyzer and their thermal stability was analyzed. The results show that the addition of a small amount of Ti or Cr in the Cu film allows the preferred orientation growth of Cu along the <111> orientation. The contents of Cu and Si at the interface between the two samples decreased rapidly, indicating that the barrier layer was formed at the interface and the diffusion between Cu and Si was inhibited. The results of the leakage current tests on Cu (Ti) / SiO_2 / Si and Cu (Cr) / SiO_2 / Si samples show that the self-formed barrier layer of Cr has better thermal stability.