应用背散射(R.B.S)方法测量了单层金属膜(Fe膜、Au膜)、双层金属膜(Ti-Fe膜)、双层介质膜(Si-Si○_2-Si_3N_4 膜)的厚度。在对Si-Si○_2-Si_3N_4双层介质膜测厚的同时,还测出Si_3N_4膜中含有一定量氧的存在,检验了它的生长质量。用背散射方法对错(Zr)的氧化进行了初步研究,测定了在1964年于400 ℃干燥空气中分别氧化7＇、14＇、28＇、80＇的ZrO_2膜的厚度。实验结果大体上与锆氧化的抛物线规律 The thickness of the single metal film (Fe film, Au film), double metal film (Ti-Fe film) and double dielectric film (Si-Si ○ _2-Si_3N_4 film) were measured by backscattering (R.B.S) method. Simultaneously with the thickness measurement of the Si-Si ○ _2-Si_3N_4 double-layer dielectric film, the existence of a certain amount of oxygen in the Si_3N_4 film was also measured, and its growth quality was examined. The backscattering method was used to study the oxidation of zirconium (Zr). The thickness of the ZrO 2 film was measured in 1964 at 7 ℃, 14 ’, 28’ and 80 ’respectively in dry air at 400 ℃. The experimental results are basically parabolic law with zirconium oxidation