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在分析质子与硅反应的基础上 ,建立了质子单粒子翻转截面理论计算模型 ,提出了模拟计算方法。计算得到了不同能量的高能质子与硅反应产生的次级粒子种类、截面、能谱和双微分截面。采用 Monte Carlo方法模拟质子与硅的反应 ;应用 TRIM程序计算次级粒子的射程 ;计算得到次级粒子在存储单元的灵敏区内沉积的能量 ,产生的电荷。通过与临界电荷的比较 ,判断是否导致单粒子翻转 ,从而得到单粒子翻转截面。计算得到的单粒子翻转截面与实验数据符合较好。
Based on the analysis of the reaction between proton and silicon, a theoretical calculation model of single-particle proton cross-section was established and a simulation calculation method was proposed. The species, cross section, energy spectrum and double differential cross section of secondary particles produced by reaction of high energy protons with different energies with silicon were calculated. The Monte Carlo method is used to simulate the reaction of protons and silicon. The TRIM program is used to calculate the range of the secondary particles. The energy of the secondary particles deposited in the sensitive region of the memory cell and the charge generated are calculated. By comparing with the critical charge, it can be judged whether the single particles turn over to get the single-particle inversion section. The calculated single-particle inversion cross section is in good agreement with the experimental data.