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用低压汞灯照射氧气和甲硅烷来制备二氧化硅膜。沉积速度随紫外辐射量增加,而活化能降低到0.22eV。254nm光对沉积的作用很小。沉积膜的折射率为1.44～1.46。在光—化学汽相沉积膜中没有出现与Si-H键有关的红外吸收峰值。
A silicon dioxide film was prepared by irradiating oxygen and monosilane with a low-pressure mercury lamp. The deposition rate increases with the amount of ultraviolet radiation, while the activation energy decreases to 0.22eV. The effect of 254 nm light on the deposition is small. The refractive index of the deposited film is 1.44 to 1.46. No infrared absorption peaks related to Si-H bonds were observed in the photo-CVD film.